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Robert W. Bower (June 12, 1936) is an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California.

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  • روبرت دبليو. باور (ar)
  • Robert W. Bower (de)
  • Robert W. Bower (en)
  • Robert W. Bower (pt)
  • 罗伯特·W·鲍尔 (zh)
rdfs:comment
  • روبرت دبليو. باور (بالإنجليزية: Robert W. Bower)‏ هو فيزيائي أمريكي، ولد في 12 يونيو 1936 في سانتا مونيكا في الولايات المتحدة. (ar)
  • Robert W. Bower (Santa Mônica, 12 de junho de 1936) é um físico estadunidense. (pt)
  • 罗伯特·W·鲍尔(英語:Robert W. Bower,1936年6月12日-)是美国应用物理学家,加州聖莫尼卡人,畢業於加州大学伯克利分校,先後在加利福尼亚理工学院獲得碩士及博士學位。1997年入選,1999年當選美国国家工程院院士。 (zh)
  • Robert W. Bower (* 12. Juni 1936 in Santa Monica, Kalifornien) ist ein US-amerikanischer Elektroingenieur und Hochschullehrer. 1954 bis 1958 diente er in der US Air Force. Er erlangte 1962 seinen Bachelor in Physik an der University of California in Berkeley, 1963 den Master of Engineering und 1973 den Ph. D. am California Institute of Technology. (de)
  • Robert W. Bower (June 12, 1936) is an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California. (en)
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  • Robert W. Bower (en)
name
  • Robert W. Bower (en)
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  • Santa Monica, California (en)
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